106年9月23日星期六

演講:Characteristics of Si(111) surface with embedded C84 molecules--6/25(二)14:30-16:30 2013/06/18

講 題:Characteristics of Si(111) surface with embedded C84 molecules
講 者:Professor Mon-Shu Ho, Department of Physics, National Chung Hsing University
時 間:102 年 06 月 25 日(二)上午14:30-16:30
地 點:(1) 台中分部 台中市中部科學工業園區科園路22號 TC208簡報室(現場)
(2) 新竹分部 新竹市科學園區研發六路7號 國際會議廳(視訊)
(3) 台南分部 台南市新市區南科三路28號 512研發組會議室(視訊)


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****************************** NCHC Seminar *************************************
Title: Characteristics of Si(111) surface with embedded C84 molecules

Speaker: Professor Mon-Shu Ho, Department of Physics, National Chung Hsing University
Time:14:30-16:30, 102 /06/ 25 (Tuesday)
Place:(1) Taichung Branch, Meeting room TC208 (No. 22, Keyuan Rd., Central Taiwan Science Park, Taichung City) (live presentation)
(2) Hsinchu Headquarters, International Conference Hall (No. 7, R&D 6th Rd., Hsinchu Science Park, Hsinchu City) (live video)
(3) Tainan Branch, Meeting room 512 (No. 28, Nan-Ke 3rd Rd., Hsin-Shi Dist., Tainan City) (live video)
Abstract:A monolayer of fullerene molecules on Si(111) surfaces is fabricated in an ultrahigh vacuum chamber through a controlled self-assembly process. The characteristics of self-assembled Si(111) surfaces, including supramolecular structures, electronic density of states, the quantum confinement effect, field emission features, and optoelectronical properties with embedded C84 are determined by the use of an ultrahigh vacuum scanning probe microscope. The results revealed that such a silicon surface with embedded C84 has a wide band gap of ~3.4eV, high emission efficiency and low turn-on voltage, all of which are crucial to nano-electronics, optoelectronics, and the fabrication of semiconductor carbide. The measured data derived from photoluminescence emission experiments further confirm the corresponding band gap value obtained from I-V curves. The theoretical results from first-principles calculations for the field enhancement factor are compared with experimental measurements.

Everyone is welcome.
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